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Chinese translation for "physical conception"

物理概念

Related Translations:
form a conception of:  抱有一种想法对对...抱有一种想法
physical artifact:  物理赝像
physical absorptivity:  物理吸收能力
physical trainer:  体育教练员
physical positioning:  物理定位
physical damage:  攻击的物理损害攻击的物理危害机械损坏物理伤害有形损失
physical obsolescence:  实物陈旧物质上的废弃
physical efforts:  体力劳动
physical behaviour:  物理性质
physical obstruction:  实质障碍物理阻碍物
Example Sentences:
1.The results of engineering examples show that the method possesses a clear physical conception and is convenient for use
工程实例分析结果表明,本文方法具有物理概念清晰、运用方便的特点。
2.X - ray kinematics , characterized by its clear physical conception , is widely used in modern semiconductor material analysis
在现代半导体材料的x射线分析中,运动学理论由于物理思想清晰而被广泛应用。
3.Series of physical conceptions interrelated such as ideal saturated fire area , saturated fire area . accordingly , a quantitative construction method for saturated fire area is presented . 2
定义了理想饱和射击区域、饱和射击区域等一系列基本概念,并讨论了一种实用的饱和射击区域的构成方法; 2
4.The article has pointed out some measures to improve the teaching of physical conception . ( 3 ) to strengthen the teaching of physical law . when we go in for the teaching of physical law , we must pay attention to four aspects
物理规律是物理知识的核心部分,它能有效地培养和发展学生的思维能力、运用物理知识解决实际问题的能力,文章结合中学教学实践提出了在规律教学中必须注意的四个方面。
5.Magneto - electronics lies in the area of current scientific interest in condensed matter physics and material sciences , due to abundant physical conceptions and applied potentials . it is a base of magnetic devices with high density and sensitivity . recently , non - volatile magnetic computer memory ( mram ) is expected to have a large economic impact , and has been significantly focused on its experimenatal research
目前,非挥发性磁存储记忆器件?磁存储器magneticrandomaccessmemory ( mram )的研究和开发已成为自旋电子学研究的主要应用目标;而在室温和低磁场下,具有足够大的磁电阻( mr )效应成为实现mram器件应用的前提。
6.A sub - circuit model for vdmos is built according to its physical structure . parameters and formulas describing the device are also derived from this model . comparing to former results , this model avoids too many technical parameters and simplify the sub - circuit efficiently . as a result of numeric computation , this simple model with clear physical conception demonstrates excellent agreements between measured and modeled response ( dc error within 5 % , ac error within 10 % ) . such a model is now available for circuit simulation and parameter extraction
从vdmos的物理结构出发建立子电路模型,进而导出描述其交直流特性的参数及模型公式.相对以往文献的结果,该模型避免了过多工艺参数的引入,同时对子电路进行了有效的简化.在参数提取软件中的加载结果表明,该模型结构简单,运算速度快,物理概念清晰,拟合曲线与测试数据符合精度高(直流误差5以内,交流误差10以内) ,适于在电路模拟及参数提取软件中应用
7.Abstract : a sub - circuit model for vdmos is built according to its physical structure . parameters and formulas describing the device are also derived from this model . comparing to former results , this model avoids too many technical parameters and simplify the sub - circuit efficiently . as a result of numeric computation , this simple model with clear physical conception demonstrates excellent agreements between measured and modeled response ( dc error within 5 % , ac error within 10 % ) . such a model is now available for circuit simulation and parameter extraction
文摘:从vdmos的物理结构出发建立子电路模型,进而导出描述其交直流特性的参数及模型公式.相对以往文献的结果,该模型避免了过多工艺参数的引入,同时对子电路进行了有效的简化.在参数提取软件中的加载结果表明,该模型结构简单,运算速度快,物理概念清晰,拟合曲线与测试数据符合精度高(直流误差5以内,交流误差10以内) ,适于在电路模拟及参数提取软件中应用
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